Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

Abstract Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic advanced materials have been developed to meet the development requirements high-density circuits. However, these still far from being widely applicable owing their incompatibility with modern silicon-based foundry lines. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design simplify conventional multi-transistor into gates, thus reducing circuit footprint by at least 40%. More importantly, proposed configuration could simultaneously provide multi-functionalities memory, artificial synapses. In particular, our mimic synapses in three dimensions while implemented standard silicon-on-insulator process technology. The foundry-line-compatible has great potential for immediate widespread applications next-generation multifunctional electronics.